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Intel Brags About Breaking Through the 20nm NAND Barrier


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Old 10-29-2009, 09:32 AM   #1
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Default Intel Brags About Breaking Through the 20nm NAND Barrier

Intel working in conjunction with Numonyx unveiled breakthrough technology that will keep Moore’s Law accurate. The new process will enable non-volatile memory to cost-effectively scale down to 5nm.

Without getting too technical, the companies were able to build upon phase-change memory (PCM) and create a new technology call “phase-change memory and switch” (PCMS). PCMS integrates a new thin-film selector that effectively lets the memory/selector layers stack very densely. The nature of PCM allows it operate in two ways: quick “RAM like” bit changing, and non-volatile storage.

It is unlikely well see devices using the technology for “many years” according to Al Fazio, Intel Fellow and director of memory technology development. However, this is a key first step in continuing to scale technology according to Moore’s Law.



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